HbiMOS Technology :

3 µm CMOS Double Layer Metal
Analog / Digital Mixed Standard Cell
BCD (Bipolar, CMOS, DMOS) 100V Technologie
Density : 400 nominal Gates per mm² (HBiMOSF)
Power supply: 4.5, 18 and 40 Volt analog
Switch Capacitor Filter, Operational Amplifier, Comparator, Bandgap Reference
A/D and D/A converter

I2T100 Technology :

0.7µm CMOS Double or Triple Layer Metal and Power Metal
High Voltage Extension MMM Mixed Signal Technology
High Voltage : up to 100V (NDMOS, PDMOS)
High Density : up to 2500 nominal Gates per mm²
High Ohmic Resistor:2kO per Square
High Value Capacitors: 750pF per mm²
µController : 8-Bit MTC-8308 RISC Core
Option : EEPROM (I2T-EE)

CMOS 07 Technology :

0.7µm CMOS Double or Triple Layer Metal
Analog / Digital Mixed Standard Cell
Density : up to 2500 nominal gates/mm²
High Ohmic Resistor:2kO per Square
High Value Capacitors: 750pF per mm²
µController : 8-Bit MTC-8308 RISC Core
RAM, ROM, Multiplier, FIFO Generator
Options : pure digital (C07D), mixed signal (C07A), low vt (C07vt), mixed signal with EEPROM (C07A-EE) (Double layer Metal), C07T (Triple layer Metal)

CMOS 05 Technology :

0.5µm CMOS Triple Layer Metal
Analog / Digital Mixed Standard Cell
High Density: 5000 nominal gates/mm²
High Ohmic Resistor : 1kO per Square
High Value Capacitors : 1.1nF per mm²
µController : 8 to 32 Bit Core
A/D, D/A Converter : 8 to 14 bit
RAM, ROM Digital Filter Generator
options : C05D for digital and C05A for mixed signal

CMOS 035 Technology :

0.35µm CMOS Layer Metal
Density : up to 20000 nominal gates/ mm²
Voltage range up to 3.6 V
Options : C035D (digital) C035A (mixed signal), C035SiGe (hight frequency,4 layer metal)
5V tolerant cells
Analog / Digital Mixed Standard Cell
High Ohmic Resistor : 1kO per Square
High Value Capacitors : 1.1nF per mm²
µController : 8 to 32 Bit Core
A/D, D/A Converter : 8 to 14 bit
RAM, ROM Digital Filter Generator